Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0960-1317/23/6/065026
DC Field | Value | |
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dc.title | Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process | |
dc.contributor.author | Zhou, H. | |
dc.contributor.author | Kropelnicki, P. | |
dc.contributor.author | Tsai, J.M. | |
dc.contributor.author | Lee, C. | |
dc.date.accessioned | 2014-10-07T04:25:55Z | |
dc.date.available | 2014-10-07T04:25:55Z | |
dc.date.issued | 2013-06 | |
dc.identifier.citation | Zhou, H., Kropelnicki, P., Tsai, J.M., Lee, C. (2013-06). Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process. Journal of Micromechanics and Microengineering 23 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/23/6/065026 | |
dc.identifier.issn | 09601317 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82144 | |
dc.description.abstract | A stacked double-layer (SDL) thermopile-based infrared sensor, which comprised of 96 thermocouples on a suspended membrane, has been designed and fabricated with a CMOS-compatible process. The thermoelectric properties were characterized, and responsivity (Rs) of 202.8 V W-1 and detectivity (D*) of 2.85*108 cm Hz1/2 W -1 for a SDL thermopile were derived. © 2013 IOP Publishing Ltd. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1088/0960-1317/23/6/065026 | |
dc.description.sourcetitle | Journal of Micromechanics and Microengineering | |
dc.description.volume | 23 | |
dc.description.issue | 6 | |
dc.description.page | - | |
dc.description.coden | JMMIE | |
dc.identifier.isiut | 000319451300026 | |
Appears in Collections: | Staff Publications |
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