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|Title:||Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition|
Metal-organic chemical vapor deposition (MOCVD)
Multiple quantum wells (MQWs)
|Citation:||Liu, W.,Chua, S.J.,Zhang, X.H.,Zhang, J. (2004-08). Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition. Journal of Electronic Materials 33 (8) : 841-845. ScholarBank@NUS Repository.|
|Abstract:||The direction of the piezoelectric field in InGaN/GaN multiple quantum-well (MQW) structures grown by metal-organic vapor deposition (MOCVD) was determined using excitation-power-density variable photoluminescence (PL). By comparing the excitation-power-density dependence of the shift of the PL peak and the change of the full-width at half-maximum (FWHM) of the peak from an InGaN/GaN MQW structure and an InGaN MQW-based light-emitting diode (LED), the piezoelectric field in the InGaN/GaN MQW structures was unambiguously determined to be pointing toward the substrate. This result helps to identify the surface polarity of the LED wafer as Ga-faced.|
|Source Title:||Journal of Electronic Materials|
|Appears in Collections:||Staff Publications|
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