Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/82141
Title: Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition
Authors: Liu, W.
Chua, S.J.
Zhang, X.H.
Zhang, J. 
Keywords: InGaN
Metal-organic chemical vapor deposition (MOCVD)
Multiple quantum wells (MQWs)
Photoluminescence (PL)
Piezoelectric field
Issue Date: Aug-2004
Citation: Liu, W.,Chua, S.J.,Zhang, X.H.,Zhang, J. (2004-08). Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition. Journal of Electronic Materials 33 (8) : 841-845. ScholarBank@NUS Repository.
Abstract: The direction of the piezoelectric field in InGaN/GaN multiple quantum-well (MQW) structures grown by metal-organic vapor deposition (MOCVD) was determined using excitation-power-density variable photoluminescence (PL). By comparing the excitation-power-density dependence of the shift of the PL peak and the change of the full-width at half-maximum (FWHM) of the peak from an InGaN/GaN MQW structure and an InGaN MQW-based light-emitting diode (LED), the piezoelectric field in the InGaN/GaN MQW structures was unambiguously determined to be pointing toward the substrate. This result helps to identify the surface polarity of the LED wafer as Ga-faced.
Source Title: Journal of Electronic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/82141
ISSN: 03615235
Appears in Collections:Staff Publications

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