Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3079396
Title: Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration
Authors: Fang, L.W.-W.
Zheng, Z.
Pan, J.-S.
Zhao, R.
Li, M.
Shi, L.
Chong, T.-C. 
Yeo, Y.-C. 
Issue Date: 2009
Source: Fang, L.W.-W., Zheng, Z., Pan, J.-S., Zhao, R., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C. (2009). Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration. Applied Physics Letters 94 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3079396
Abstract: The electronic property for a series of nitrogen-doped Ge 2Sb2Te5 phase change material was characterized using high-resolution x-ray photoelectron spectroscopy. The Te3d5/2 and Si 2p core-level spectra as well as valence band spectra were used in the analysis. As the nitrogen content increases, the valence band offset also decreases, while that of the conduction band increases. Our results show that the valence band and conduction band offsets of nitrogen-doped Ge 2Sb2Te5 on silicon oxide exhibit a linear dependence on nitrogen content in the film, for nitrogen content of up to 8.4 at. %. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82119
ISSN: 00036951
DOI: 10.1063/1.3079396
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