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|Title:||Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks|
High-κ gate dielectric
Quantum wells (QWs)
|Citation:||Majhi, P., Kalra, P., Harris, R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Banerjee, S., Tsai, W., Tseng, H., Jammy, R. (2008-01). Demonstration of high-performance PMOSFETs Using Si-Six Ge1-x-Si quantum wells with high-κ metal-gate stacks. IEEE Electron Device Letters 29 (1) : 99-101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.911987|
|Abstract:||Through a systematic approach, PMOSFETs with strained quantum wells (QWs) in the Si-Ge system exhibiting high performance and low off-state leakage currents comparable to optimized gate stacks on Si are demonstrated. The encouraging results are due to selectively depositing Si-Si(x)Ge(1-x)-Si heterostructure QWs, where it appears that the critical thickness requirements for these thin films based on the lattice constant mismatch are relaxed. Furthermore, the use of optimal advanced high-κ dielectric and metal-gate electrode helped realize the good device characteristics. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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