Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3674282
Title: Deep anisotropic LiNbO 3 etching with SF 6/Ar inductively coupled plasmas
Authors: Jun, D.
Wei, J.
Png, C.E.
Guangyuan, S.
Son, J.
Yang, H. 
Danner, A.J. 
Issue Date: Jan-2012
Citation: Jun, D., Wei, J., Png, C.E., Guangyuan, S., Son, J., Yang, H., Danner, A.J. (2012-01). Deep anisotropic LiNbO 3 etching with SF 6/Ar inductively coupled plasmas. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 30 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3674282
Abstract: A SF 6/Ar inductively coupled plasma (ICP) technique was investigated to improve etching of proton exchanged LiNbO 3. The influences of He backside cooling, power, and gas flows on characteristics such as etching rate, sidewall slope angle, and surface roughness were investigated. Total gas flow is a key parameter that affects etching results, and an optimized gas flow (50 sccm) was used for lengthy etching processes (30 min). Deep (3 m) and highly anisotropic etching, as well as ultra smooth LiNbO 3 surfaces were achieved in a single-step run. The authors' proposed method has achieved the deepest, most vertical, minimal residue structure yet reported for single-step ICP etching. © 2012 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/82115
ISSN: 10711023
DOI: 10.1116/1.3674282
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