Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.914095
Title: Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier
Authors: Zang, H.
Lee, S.J. 
Loh, W.Y.
Wang, J.
Chua, K.T.
Yu, M.B.
Cho, B.J. 
Lo, G.Q.
Kwong, D.-L.
Keywords: Dark current
Dopant segregation (DS)
Germanium
Optical communications
Photodetectors
Selective epitaxial
Issue Date: Feb-2008
Citation: Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Chua, K.T., Yu, M.B., Cho, B.J., Lo, G.Q., Kwong, D.-L. (2008-02). Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier. IEEE Electron Device Letters 29 (2) : 161-164. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.914095
Abstract: We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (∼300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 °C/600 °C combined with a thin (∼10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ∼-7 A at -1 V bias (width/spacing: 30/2.5 μm). Under normal incidence illumination at 1.55 μm, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82113
ISSN: 07413106
DOI: 10.1109/LED.2007.914095
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