Please use this identifier to cite or link to this item:
|Title:||Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier|
Dopant segregation (DS)
|Source:||Zang, H., Lee, S.J., Loh, W.Y., Wang, J., Chua, K.T., Yu, M.B., Cho, B.J., Lo, G.Q., Kwong, D.-L. (2008-02). Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier. IEEE Electron Device Letters 29 (2) : 161-164. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.914095|
|Abstract:||We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (∼300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 °C/600 °C combined with a thin (∼10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ∼-7 A at -1 V bias (width/spacing: 30/2.5 μm). Under normal incidence illumination at 1.55 μm, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 15, 2018
WEB OF SCIENCETM
checked on Feb 7, 2018
checked on Feb 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.