Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2020613

Title:	Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant
Authors:	He, W. Zhang, L. Chan, D.S.H. Cho, B.-J.
Keywords:	Crystallization Cubic structure Hafnium oxide High-κ dielectric Lanthanum oxide
Issue Date:	2009
Citation:	He, W., Zhang, L., Chan, D.S.H., Cho, B.-J. (2009). Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant. IEEE Electron Device Letters 30 (6) : 623-625. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2020613
Abstract:	It is demonstrated that HfO2 films can have much higher dielectric-constant values than the usual reported value of 20-24 by optimized incorporation of lanthanum element and crystallization to cubic structure. When HfO2 with 8% La is crystallized into cubic structure, the film exhibits the κ value of ∼38 which is the highest among ever reported HfO2-based high-κ dielectrics. The increased value of HfO2 with 8% La enables the leakage current to be reduced more than one order of magnitude lower, compared to amorphous-phase HfO2 under the same electric field. The dependence of film thickness and annealing temperature on the cubic crystallization is also reported. © 2009 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82111
ISSN:	07413106
DOI:	10.1109/LED.2009.2020613
Appears in Collections:	Staff Publications

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