Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1354161
Title: Crystalline zirconia oxide on silicon as alternative gate dielectrics
Authors: Wang, S.J. 
Ong, C.K. 
Xu, S.Y. 
Chen, P. 
Tjiu, W.C.
Chai, J.W.
Huan, A.C.H.
Yoo, W.J. 
Lim, J.S.
Feng, W.
Choi, W.K. 
Issue Date: 12-Mar-2001
Citation: Wang, S.J., Ong, C.K., Xu, S.Y., Chen, P., Tjiu, W.C., Chai, J.W., Huan, A.C.H., Yoo, W.J., Lim, J.S., Feng, W., Choi, W.K. (2001-03-12). Crystalline zirconia oxide on silicon as alternative gate dielectrics. Applied Physics Letters 78 (11) : 1604-1606. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1354161
Abstract: Epitaxial crystalline yittria-stabilized zirconia (YSZ) oxide films were grown on silicon wafers by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found to be atomically sharp and commensurately crystallized without an amorphous layer. An x-ray photoelectron spectroscopy depth profile and transmission electron microscopy investigation showed that no SiO2 formed at the interface. For a film with electrical equivalent oxide thickness (teox) 14.6 Å, the leakage current is about 1.1 × 10-3 A/cm2 at 1 V bias voltage. The hysteresis and interface state density in this film are measured to be less than 10 mV and 2.0 × 1011 eV-1 cm-2, respectively. © 2001 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82109
ISSN: 00036951
DOI: 10.1063/1.1354161
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