Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4850415
Title: Control of domain wall motion at vertically etched nanotrench in ferromagnetic nanowires
Authors: Narayanapillai, K.
Yang, H. 
Issue Date: 16-Dec-2013
Source: Narayanapillai, K., Yang, H. (2013-12-16). Control of domain wall motion at vertically etched nanotrench in ferromagnetic nanowires. Applied Physics Letters 103 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4850415
Abstract: We study field-induced domain wall motion in permalloy nanowires with vertically etched nanotrench pinning site. Micromagnetic simulations and electrical measurements are employed to characterize the pinning potential at the nanotrench. It is found that the potential profile for a transverse wall significantly differs from that of a vortex wall, and there is a correlation between the pinning strength and the potential profile. Reliable domain wall pinning and depinning is experimentally observed from a nanotrench in permalloy nanowires. This demonstrates the suitability of the proposed nanotrench pinning sites for domain wall device applications. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82092
ISSN: 00036951
DOI: 10.1063/1.4850415
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