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|Title:||Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation|
fin field-effect transistor (FinFET)
platinum silicide (PtSi)
|Citation:||Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C. (2011-11). Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation. IEEE Transactions on Electron Devices 58 (11) : 3852-3862. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2011.2166077|
|Abstract:||Tellurium (Te) implantation was introduced to tune the effective electron Schottky barrier height (SBH) ΦB n of platinum-based silicide (PtSi) contacts formed on n-type silicon-carbon (Si:C). Te introduced by ion implantation prior to Pt deposition segregated at the PtSi:C/Si:C interface during PtSi:C formation. The presence of Te at the PtSi:C/Si:C interface leads to a low ΦB n of 120 meV for PtSi:C contacts. The integration of Te-segregated PtSi:C contacts on strained n-channel fin field-effect transistors (FinFETs) with Si:C source/drain (S/D) stressors achieves the lowering of the parasitic series resistance RSD by ∼62% and increases the saturation drive current by ∼22%. The Te-segregated contact-resistance reduction technology does not degrade the short-channel effects and positive-bias temperature instability characteristics of n-FinFETs with Si:C S/D. As PtSi has a low SBH for holes and is a suitable contact for p-FinFETs, this new contact-resistance reduction technology has potential to be introduced as a single-metal-silicide dual-barrier-height solution for future complementary metal-oxide-semiconductor FinFET technology. © 2011 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
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