Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2011.2166077
Title: Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
Authors: Koh, S.-M.
Kong, E.Y.-J.
Liu, B.
Ng, C.-M.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Contact resistance
fin field-effect transistor (FinFET)
platinum silicide (PtSi)
Schottky barrier
silicon-carbon (Si:C)
Tellurium (Te)
Issue Date: Nov-2011
Citation: Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C. (2011-11). Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation. IEEE Transactions on Electron Devices 58 (11) : 3852-3862. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2011.2166077
Abstract: Tellurium (Te) implantation was introduced to tune the effective electron Schottky barrier height (SBH) ΦB n of platinum-based silicide (PtSi) contacts formed on n-type silicon-carbon (Si:C). Te introduced by ion implantation prior to Pt deposition segregated at the PtSi:C/Si:C interface during PtSi:C formation. The presence of Te at the PtSi:C/Si:C interface leads to a low ΦB n of 120 meV for PtSi:C contacts. The integration of Te-segregated PtSi:C contacts on strained n-channel fin field-effect transistors (FinFETs) with Si:C source/drain (S/D) stressors achieves the lowering of the parasitic series resistance RSD by ∼62% and increases the saturation drive current by ∼22%. The Te-segregated contact-resistance reduction technology does not degrade the short-channel effects and positive-bias temperature instability characteristics of n-FinFETs with Si:C S/D. As PtSi has a low SBH for holes and is a suitable contact for p-FinFETs, this new contact-resistance reduction technology has potential to be introduced as a single-metal-silicide dual-barrier-height solution for future complementary metal-oxide-semiconductor FinFET technology. © 2011 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82090
ISSN: 00189383
DOI: 10.1109/TED.2011.2166077
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