Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2011.2166077
Title: | Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
Authors: | Koh, S.-M. Kong, E.Y.-J. Liu, B. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. |
Keywords: | Contact resistance fin field-effect transistor (FinFET) platinum silicide (PtSi) Schottky barrier silicon-carbon (Si:C) Tellurium (Te) |
Issue Date: | Nov-2011 |
Source: | Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C. (2011-11). Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation. IEEE Transactions on Electron Devices 58 (11) : 3852-3862. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2011.2166077 |
Abstract: | Tellurium (Te) implantation was introduced to tune the effective electron Schottky barrier height (SBH) ΦB n of platinum-based silicide (PtSi) contacts formed on n-type silicon-carbon (Si:C). Te introduced by ion implantation prior to Pt deposition segregated at the PtSi:C/Si:C interface during PtSi:C formation. The presence of Te at the PtSi:C/Si:C interface leads to a low ΦB n of 120 meV for PtSi:C contacts. The integration of Te-segregated PtSi:C contacts on strained n-channel fin field-effect transistors (FinFETs) with Si:C source/drain (S/D) stressors achieves the lowering of the parasitic series resistance RSD by ∼62% and increases the saturation drive current by ∼22%. The Te-segregated contact-resistance reduction technology does not degrade the short-channel effects and positive-bias temperature instability characteristics of n-FinFETs with Si:C S/D. As PtSi has a low SBH for holes and is a suitable contact for p-FinFETs, this new contact-resistance reduction technology has potential to be introduced as a single-metal-silicide dual-barrier-height solution for future complementary metal-oxide-semiconductor FinFET technology. © 2011 IEEE. |
Source Title: | IEEE Transactions on Electron Devices |
URI: | http://scholarbank.nus.edu.sg/handle/10635/82090 |
ISSN: | 00189383 |
DOI: | 10.1109/TED.2011.2166077 |
Appears in Collections: | Staff Publications |
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