Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2012.2185799
DC Field | Value | |
---|---|---|
dc.title | Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation | |
dc.contributor.author | Koh, S.-M. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:25:16Z | |
dc.date.available | 2014-10-07T04:25:16Z | |
dc.date.issued | 2012-04 | |
dc.identifier.citation | Koh, S.-M., Samudra, G.S., Yeo, Y.-C. (2012-04). Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation. IEEE Transactions on Electron Devices 59 (4) : 1046-1055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2185799 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82088 | |
dc.description.abstract | In this work, strained n-channel FinFETs (nFinFETs) with silicon-carbon (Si:C) source/drain (S/D) stressors featuring NiSi:C contacts with segregated sulfur at the NiSi:C/Si:C interface are investigated in detail. The physical mechanism for the reduction in an effective Schottky barrier for electrons Φ Bn due to presilicide sulfur ion implant and segregation is examined. The presence of sulfur near the NiSi:C/Si:C interface and its behavior as charged donor-like trap states was used to explain the enhancement of electron tunneling across the contact and the reduction in Φ Bn down to 110 meV. New analysis using numerical simulation is presented. The results indicate that the presence of charged states near the interface plays a role in achieving low Φ B n. When the S-segregated NiSi:C contact was integrated in strained nFinFETs with Si:C S/D stressors, external series resistance is reduced, and the drive current is improved. The dependence of the drive current on fin width and gate length is also studied. © 2006 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2012.2185799 | |
dc.source | Scopus | |
dc.subject | Contact resistance | |
dc.subject | fin width | |
dc.subject | FinFET | |
dc.subject | nickel silicide | |
dc.subject | schottky barrier | |
dc.subject | silicon-carbon (Si:C) | |
dc.subject | sulfur | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2012.2185799 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 59 | |
dc.description.issue | 4 | |
dc.description.page | 1046-1055 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000302083800024 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.