Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2012.2185799
Title: Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
Authors: Koh, S.-M.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Contact resistance
fin width
FinFET
nickel silicide
schottky barrier
silicon-carbon (Si:C)
sulfur
Issue Date: Apr-2012
Citation: Koh, S.-M., Samudra, G.S., Yeo, Y.-C. (2012-04). Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation. IEEE Transactions on Electron Devices 59 (4) : 1046-1055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2185799
Abstract: In this work, strained n-channel FinFETs (nFinFETs) with silicon-carbon (Si:C) source/drain (S/D) stressors featuring NiSi:C contacts with segregated sulfur at the NiSi:C/Si:C interface are investigated in detail. The physical mechanism for the reduction in an effective Schottky barrier for electrons Φ Bn due to presilicide sulfur ion implant and segregation is examined. The presence of sulfur near the NiSi:C/Si:C interface and its behavior as charged donor-like trap states was used to explain the enhancement of electron tunneling across the contact and the reduction in Φ Bn down to 110 meV. New analysis using numerical simulation is presented. The results indicate that the presence of charged states near the interface plays a role in achieving low Φ B n. When the S-segregated NiSi:C contact was integrated in strained nFinFETs with Si:C S/D stressors, external series resistance is reduced, and the drive current is improved. The dependence of the drive current on fin width and gate length is also studied. © 2006 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82088
ISSN: 00189383
DOI: 10.1109/TED.2012.2185799
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