Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2045682
Title: Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
Authors: Sinha, M.
Lee, R.T.P. 
Chor, E.F. 
Yeo, Y.-C. 
Keywords: Al implant
Contact resistance
FinFET
NiSiGe
Series resistance
Issue Date: Jun-2010
Source: Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2010-06). Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain. IEEE Transactions on Electron Devices 57 (6) : 1279-1286. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2045682
Abstract: We have demonstrated the introduction of an additional aluminum (Al) implant step in the fabrication of strained p-FinFETs with silicongermanium (SiGe) source/drain (S/D). Al is implanted into the p+-SiGe S/D region at energy of 10 keV and a dose of 2×1014 atoms/cm 2, followed by its segregation at the NiSiGe/p+-SiGe S/D interface during germanosilicidation. The presence of Al at this interface leads to lowering of the effective Schottky barrier height for hole conduction, which, in essence, lowers the S/D contact resistance RC. R C is a dominant component of the FinFET parasitic series resistance RSD, which is lowered by approximately 25% using this technology, correspondingly leading to a substantial increase in the saturation drive current. The novel Al-segregated NiSiGe/p+-SiGe S/D contact junction in p-FinFETs does not degrade short-channel effects or the NiSiGe film morphology. © 2010 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82086
ISSN: 00189383
DOI: 10.1109/TED.2010.2045682
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

9
checked on Apr 10, 2018

WEB OF SCIENCETM
Citations

8
checked on Apr 10, 2018

Page view(s)

42
checked on Apr 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.