Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000611
Title: Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
Authors: Toh, E.-H.
Wang, G.H.
Chan, L.
Weeks, D.
Bauer, M.
Spear, J.
Thomas, S.G.
Samudra, G. 
Yeo, Y.-C. 
Keywords: Impact-ionization MOS (I-MOS)
Multiple gates
Nanowire
Silicon-carbon
Issue Date: Jul-2008
Citation: Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008-07). Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor. IEEE Electron Device Letters 29 (7) : 731-733. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000611
Abstract: The p-channel impact-ionization nanowire multiple-gate field-effect transistors (I-MuGFETs or I-FinFETs), which have a multiple-gate/ nanowire-channel architecture, were demonstrated. The superior gate-to-channel coupling reduces the breakdown voltage VBD for enhanced device performance. For the first time, an in situ doped source was incorporated with the impact-ionization MOS transistor. The in situ phosphorus-doped Si source with improved dopant activation and very abrupt junction profile reduces VBD and enhances the on-state current Ion·. An additional improvement was also achieved by incorporating a strained Si1-yCy impact-ionization region (I-region) and an in situ doped Si1-y Cy source, leading to reduction in VBD and enhancement in Ion·. This is due to strain-induced reduction of the impact-ionization threshold energy Eth. Furthermore, an excellent subthreshold swing of below 3 mV/decade at room temperature was achieved for all devices. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82065
ISSN: 07413106
DOI: 10.1109/LED.2008.2000611
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