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|Title:||Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor|
|Keywords:||Impact-ionization MOS (I-MOS)|
|Citation:||Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008-07). Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor. IEEE Electron Device Letters 29 (7) : 731-733. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000611|
|Abstract:||The p-channel impact-ionization nanowire multiple-gate field-effect transistors (I-MuGFETs or I-FinFETs), which have a multiple-gate/ nanowire-channel architecture, were demonstrated. The superior gate-to-channel coupling reduces the breakdown voltage VBD for enhanced device performance. For the first time, an in situ doped source was incorporated with the impact-ionization MOS transistor. The in situ phosphorus-doped Si source with improved dopant activation and very abrupt junction profile reduces VBD and enhances the on-state current Ion·. An additional improvement was also achieved by incorporating a strained Si1-yCy impact-ionization region (I-region) and an in situ doped Si1-y Cy source, leading to reduction in VBD and enhancement in Ion·. This is due to strain-induced reduction of the impact-ionization threshold energy Eth. Furthermore, an excellent subthreshold swing of below 3 mV/decade at room temperature was achieved for all devices. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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