Please use this identifier to cite or link to this item:
|Title:||Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor|
|Keywords:||Impact-ionization MOS (I-MOS)|
|Citation:||Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008-07). Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor. IEEE Electron Device Letters 29 (7) : 731-733. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000611|
|Abstract:||The p-channel impact-ionization nanowire multiple-gate field-effect transistors (I-MuGFETs or I-FinFETs), which have a multiple-gate/ nanowire-channel architecture, were demonstrated. The superior gate-to-channel coupling reduces the breakdown voltage VBD for enhanced device performance. For the first time, an in situ doped source was incorporated with the impact-ionization MOS transistor. The in situ phosphorus-doped Si source with improved dopant activation and very abrupt junction profile reduces VBD and enhances the on-state current Ion·. An additional improvement was also achieved by incorporating a strained Si1-yCy impact-ionization region (I-region) and an in situ doped Si1-y Cy source, leading to reduction in VBD and enhancement in Ion·. This is due to strain-induced reduction of the impact-ionization threshold energy Eth. Furthermore, an excellent subthreshold swing of below 3 mV/decade at room temperature was achieved for all devices. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 20, 2018
WEB OF SCIENCETM
checked on Sep 10, 2018
checked on Sep 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.