Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mee.2007.04.084
Title: Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack
Authors: Samanta, P.
Zhu, C. 
Chan, M.
Keywords: Acceptor and donor-like interface traps
Border traps
Hafnium oxide
High-k
Proton transport
Issue Date: Sep-2007
Source: Samanta, P., Zhu, C., Chan, M. (2007-09). Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack. Microelectronic Engineering 84 (9-10) : 1964-1967. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2007.04.084
Abstract: We have investigated electrical stress-induced charge carrier generation/trapping in a 4.2 nm thick (physical thickness Tphy) hafnium oxide (HfO2)/silicon dioxide (SiO2) dielectric stack in metal-oxide-semiconductor (MOS) capacitor structures with negative bias on the gate. It is found that electron trapping is suppressed in our devices having an equivalent oxide thickness (EOT) as low as 2.4 nm. Our measurement results indicate that proton-induced defect generation is the dominant mechanism of generation of bulk, border and interface traps during stress. In addition, we have shown that constant voltage stress (CVS) degrades the dielectric quality more than constant current stress (CCS). © 2007 Elsevier B.V. All rights reserved.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/82048
ISSN: 01679317
DOI: 10.1016/j.mee.2007.04.084
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Feb 28, 2018

WEB OF SCIENCETM
Citations

12
checked on Feb 19, 2018

Page view(s)

12
checked on Mar 12, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.