Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2002.807712
Title: Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
Authors: Lee, S.J. 
Choi, C.H.
Kamath, A.
Clark, R.
Kwong, D.L.
Keywords: Chemical vapor deposition (CVD)
Hafnium oxide (HfO2)
High-k gate dielectric
Issue Date: Feb-2003
Source: Lee, S.J., Choi, C.H., Kamath, A., Clark, R., Kwong, D.L. (2003-02). Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications. IEEE Electron Device Letters 24 (2) : 105-107. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807712
Abstract: We investigate for the first time the possibility of integrating chemical vapor deposition (CVD) HfO2 into the multiple gate dielectric system-on-a-chlp (SoC) process in the range of 6-7 nm, which supports higher voltage (2.5-5-V operation/tolerance). Results show that CVD HfO2-SiO2 stacked gate dielectric (EOT = 6.2 nm) exhibits lower leakage current than that of SiO2 (EOT = 5.7 nm) by a factor of ∼102, with comparable interface quality (Dit ∼ 1 × 1010 cm-2 eV-1). The presence of negative fixed charge is observed in HfO2-SiO2 gate stack. In addition, the addition of HfO2 on SiO2 does not alter the dominant conduction mechanism of Fowler-Nordheim tunneling in HfO2-SiO2 gate stack. Furthermore, the HfO2-SiO2 gate stack shows longer time to breakdown TBD than SiO2 under constant voltage stress. These results suggest that it may be feasible to use such a gate stack for higher voltage operation in SoC, provided other key requirements such as Vt stability (charge trapping under stress) can be met and the negative fixed charge eliminated.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82039
ISSN: 07413106
DOI: 10.1109/LED.2002.807712
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