Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1359-6462(01)00743-6
Title: Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM
Authors: Ho, Y.W.
Ng, V. 
Choi, W.K. 
Ng, S.P.
Osipowicz, T. 
Seng, H.L. 
Tjui, W.W.
Li, K.
Keywords: Germanium
Nanocrystal
Raman spectroscopy
Rutherford backscattering
Transmission electron microscopy
Issue Date: 18-May-2001
Citation: Ho, Y.W., Ng, V., Choi, W.K., Ng, S.P., Osipowicz, T., Seng, H.L., Tjui, W.W., Li, K. (2001-05-18). Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEM. Scripta Materialia 44 (8-9) : 1291-1295. ScholarBank@NUS Repository. https://doi.org/10.1016/S1359-6462(01)00743-6
Abstract: The high resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectroscopy (RBS) and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal annealing (RTA) was presented. HRTEM reveals that annealing temperatures below 800°C produce fewer and smaller Ge nanocrystals compared to those produced at 800°C. Above 800°C, the nanocrystals formed have a wide range of size distribution. Therefore the optimum temperature is at 800°C to have uniformly sized and regularly spaced nanocrystals. RBS was performed to establish the Ge distribution in the SiO2 matrix during annealing.
Source Title: Scripta Materialia
URI: http://scholarbank.nus.edu.sg/handle/10635/82035
ISSN: 13596462
DOI: 10.1016/S1359-6462(01)00743-6
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