Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3340947
Title: Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor
Authors: Cheng, R. 
Liu, B.
Yeo, Y.-C. 
Issue Date: 2010
Citation: Cheng, R., Liu, B., Yeo, Y.-C. (2010). Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor. Applied Physics Letters 96 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3340947
Abstract: We report the investigation of carrier backscattering characteristics of compressively strained p-channel field-effect transistors (p-FETs) with diamondlike carbon (DLC) liner stressor. p-FETs strained by the DLC liner exhibit up to ∼40% enhancement in carrier injection velocity νinj. However, a slight reduction in ballistic efficiency B sat is also observed in the DLC stressed p-FETs. Despite the B sat degradation, an overall boost in saturation drive current I Dsat is achieved. For a DLC stressed p-FET with gate length L G =90 nm, a ∼36% enhancement in IDsat is observed with a ∼40% improvement in νinj. The dependence of I Dsat on νinj and carrier mobility μ is also discussed in this letter. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82030
ISSN: 00036951
DOI: 10.1063/1.3340947
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