Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2007.09.013
Title: Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
Authors: Ang, K.-W.
Chin, H.-C.
Chui, K.-J.
Li, M.-F. 
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Ballistic efficiency
Carrier backscattering
Injection velocity
Strain
Issue Date: Nov-2007
Source: Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-11). Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions. Solid-State Electronics 51 (11-12) : 1444-1449. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2007.09.013
Abstract: This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon-carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering rsat and source injection velocity υinj were observed, accounting for the large drive current IDsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in rsat is related to a shorter critical length ℓ0 for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υinj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed. © 2007 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/82028
ISSN: 00381101
DOI: 10.1016/j.sse.2007.09.013
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