Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000600
Title: Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
Authors: Pu, J. 
Kim, S.-J.
Lee, S.-H.
Kim, Y.-S.
Kim, S.-T.
Choi, K.-J.
Cho, B.J. 
Keywords: Flash memory
Floating gate (FG)
Retention
Silicon carbide (SiC-3C)
Silicon carbide (Sic-3C)
Issue Date: Jul-2008
Citation: Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J. (2008-07). Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory. IEEE Electron Device Letters 29 (7) : 688-690. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000600
Abstract: We propose a novel approach to engineering floating gates (FGs) of Flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/ erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled Flash memory cells. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82027
ISSN: 07413106
DOI: 10.1109/LED.2008.2000600
Appears in Collections:Staff Publications

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