Please use this identifier to cite or link to this item: https://doi.org/10.1364/OE.19.005063
Title: Breakdown delay-based depletion mode silicon modulator with photonic hybrid-lattice resonator
Authors: Xin, M.
Png, C.E.
Danner, A.J. 
Issue Date: 14-Mar-2011
Citation: Xin, M., Png, C.E., Danner, A.J. (2011-03-14). Breakdown delay-based depletion mode silicon modulator with photonic hybrid-lattice resonator. Optics Express 19 (6) : 5063-5076. ScholarBank@NUS Repository. https://doi.org/10.1364/OE.19.005063
Abstract: A compact silicon electro-optic modulator that operates in the breakdown delay based depletion mode is introduced. This operation mode has not previously been utilized for optical modulators, and represents a way to potentially achieve much higher modulation speeds and carrier extraction efficiencies without sacrificing energy efficiency, which is a critical criterion for realizing miniaturized sub-THz modulation components in silicon. Our study shows a speed of at least 238 GHz modulation is achievable along with an ultra-low energy consumption of 26.6 fJ/bit in a simple planar P+PNN + diode example structure, which is embedded in a 2D hybrid photonic lattice mode gap resonator. The optical resonator itself is only 69 μm 2 in footprint and is designed for optimized electro-optic sensitivity and conversion efficiency with reduced carrier scattering. Both the static and dynamic device performance are backed up by fully integrated 3D optical and 3D electrical numerical results. The compact device dimensions and low energy consumption are favorable to high density photonic integration. © 2011 Optical Society of America.
Source Title: Optics Express
URI: http://scholarbank.nus.edu.sg/handle/10635/82021
ISSN: 10944087
DOI: 10.1364/OE.19.005063
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