Please use this identifier to cite or link to this item:
Title: Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recovery
Authors: Luo, Y.
Huang, D.
Liu, W.
Li, M. 
Keywords: Charge pumping
Direct-current current-voltage
Interface-trap generation/passivation
Negative bias temperature instability
Reaction-diffusion model
Issue Date: 2009
Citation: Luo, Y., Huang, D., Liu, W., Li, M. (2009). Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recovery. Journal of Semiconductors 30 (7) : -. ScholarBank@NUS Repository.
Abstract: A simple standard reaction-diffusion (RD) model assumes an infinite oxide thickness and a zero initial interface trap density, which is not the case in real MOS devices. In this paper, we numerically solve the RD model by taking into account the finite oxide thickness and an initial trap density. The results show that trap generation/passivation as a function of stress/recovery time is strongly affected by the condition of the gate-oxide/poly-Si boundary. When an absorbent boundary is considered, the RD model is more consistent with the measured interface-trap data from CMOS devices under bias temperature stress. The results also show that non-negligible initial traps should affect the power index n when a power law of the trap generation with the stress time, t n, is observed in the diffusion limited region of the RD model. © 2009 Chinese Institute of Electronics.
Source Title: Journal of Semiconductors
ISSN: 16744926
DOI: 10.1088/1674-4926/30/7/074008
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Nov 23, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.