Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2013.02.068
Title: Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate
Authors: Liu, Z.Q.
Chim, W.K. 
Chiam, S.Y.
Pan, J.S.
Ng, C.M.
Keywords: Band gap
Band offset
Dielectric constant
Lanthanum aluminate
Lanthanum yttrium aluminate
Leakage current
Yttrium
Issue Date: 1-May-2013
Source: Liu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2013-05-01). Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate. Thin Solid Films 534 : 177-182. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2013.02.068
Abstract: We studied the effects of adding yttrium (Y) in bulk lanthanum aluminate (LaAlO3 or LAO) by investigating the quaternary compound oxide, lanthanum yttrium aluminum oxide La0.3Y0.7AlO3 (LYAO), on silicon (Si). It is found that the inclusion of Y to LAO increases the band gap by ∼0.9 eV without compromising the dielectric constant. The enhancement in the band gap results in larger band offsets in LYAO and we also observe a decrease in leakage current at low voltage accumulation bias for Al/LYAO/Si as compared to Al/LAO/Si. In addition, the interface trap density of the Al/LYAO/Si structure remains comparable to that of Al/LAO/Si. Our findings show that LYAO is an attractive high dielectric constant material for use in next-generation low standby power devices. © 2013 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82002
ISSN: 00406090
DOI: 10.1016/j.tsf.2013.02.068
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