Please use this identifier to cite or link to this item:
|Title:||Ballistic transport performance of silicane and germanane transistors|
Hydrogenated silicene and germanane
|Citation:||Low, K.L., Huang, W., Yeo, Y.-C., Liang, G. (2014). Ballistic transport performance of silicane and germanane transistors. IEEE Transactions on Electron Devices 61 (5) : 1590-1598. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2313065|
|Abstract:||The ballistic transport performance of field-effect transistor (FET) based on hydrogenated silicene and germanene, i.e., silicane and germanane, respectively, is examined. The electronic band structures of silicane and germanane are investigated using the first-principles density functional theory. Subsequently, the ballistic performance of FETs is evaluated via the semiclassical ballistic transport model. We find that silicane n-MOSFET offers a relatively better ON-current performance than transistors made of germanane and 2-D transition metal dichalcogenides (2-D-TMDs) (MoS2, MoSe 2 , WS2 , and WSe2). Germanane n-MOSFET suffers from the issue of low density of states due to its smaller electron effective mass. P-FETs based on germanane and silicane have higher ON-current than those of 2-D-TMDs p-FETs. Further investigation on other aspects of silicane and germanane MOSFETs, such as gate leakage and contact resistance, is needed to comprehensively assess their overall performance metrics. © 2014 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 15, 2019
WEB OF SCIENCETM
checked on Feb 26, 2019
checked on Mar 16, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.