Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2014.2310851
Title: Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
Authors: Huang, H.
Liang, Y.C. 
Samudra, G.S. 
Ngo, C.L.L.
Keywords: AlGaN/GaN HEMTs
Au-free
gate trench
normally-off
plasma treatment.
Issue Date: 2014
Source: Huang, H., Liang, Y.C., Samudra, G.S., Ngo, C.L.L. (2014). Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures. IEEE Electron Device Letters 35 (5) : 569-571. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2014.2310851
Abstract: In this letter, partially recessed gate structures in conjunction with negative trap charges by F- plasma treatments both at AlGaN barrier and on gate dielectric surface are employed to realize the normally-OFF operation for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors in Au-free scheme. A partial gate recessed trench is designed to effectively reduce the 2-D electron gas (2DEG) density and achieve positive threshold voltage Vth without severe degradation in 2-DEG channel mobility. Furthermore, the fixed trap charges are innovatively placed at the gate AlGaN and Si3N4 layers by a two-stage F- plasma treatment to further increase the Vth , without mobility degradation. A high Vth of 1.9 V and a drain current ∼200~mA/mm are achieved in the fabricated device, which also has a lower leakage current and the higher breakdown voltage of 580 V. © 2014 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81993
ISSN: 07413106
DOI: 10.1109/LED.2014.2310851
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

21
checked on Feb 14, 2018

WEB OF SCIENCETM
Citations

17
checked on Jan 24, 2018

Page view(s)

35
checked on Feb 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.