Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3688772
Title: Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating
Authors: Liu, Z.Q.
Huang, Z.
Lü, W.M.
Gopinadhan, K. 
Wang, X.
Annadi, A.
Venkatesan, T. 
Ariando 
Issue Date: 2012
Citation: Liu, Z.Q., Huang, Z., Lü, W.M., Gopinadhan, K., Wang, X., Annadi, A., Venkatesan, T., Ariando (2012). Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating. AIP Advances 2 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3688772
Abstract: The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates. © 2012 Author(s).
Source Title: AIP Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/81989
ISSN: 21583226
DOI: 10.1063/1.3688772
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