Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.jcrysgro.2005.12.114
DC Field | Value | |
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dc.title | Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy | |
dc.contributor.author | Liu, H.F. | |
dc.contributor.author | Xiang, N. | |
dc.contributor.author | Chua, S.J. | |
dc.date.accessioned | 2014-10-07T04:23:53Z | |
dc.date.available | 2014-10-07T04:23:53Z | |
dc.date.issued | 2006-04-15 | |
dc.identifier.citation | Liu, H.F., Xiang, N., Chua, S.J. (2006-04-15). Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy. Journal of Crystal Growth 290 (1) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.114 | |
dc.identifier.issn | 00220248 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81974 | |
dc.description.abstract | We have investigated by high-resolution X-ray diffraction, secondary-ion-mass-spectroscopy (SIMS) and Raman scattering the effects of rapid thermal annealing on the structural properties of GaNxAs 1-x ternary alloys coherently grown on GaAs (0 0 1) substrates by molecular beam epitaxy. X-ray diffraction indicates that the in-plane strain does not relax and the vertical lattice in the GaNAs film tends to shrink, while SIMS reveals the absence of any N concentration change upon annealing. Furthermore, post-growth annealing causes an increase of substitutional N as revealed by the increase of the ratio of Raman scattering intensity between the nitrogen-localized vibration mode and the GaAs-like LO. After performing strain analysis, we conclude with the changes of N configurations in the GaNxAs1-x from the N-N split interstitial to the N-As split interstitial and the NAs substitutional at elevated temperatures, the thermal behaviors of N-N, N-As and NAs are reported over 700-850 °C. © 2006 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2005.12.114 | |
dc.source | Scopus | |
dc.subject | A1. High-resolution X-ray diffraction | |
dc.subject | A1. Rapid thermal annealing | |
dc.subject | A3. Molecular beam expitaxy | |
dc.subject | B1. Dilute nitrites | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.jcrysgro.2005.12.114 | |
dc.description.sourcetitle | Journal of Crystal Growth | |
dc.description.volume | 290 | |
dc.description.issue | 1 | |
dc.description.page | 24-28 | |
dc.description.coden | JCRGA | |
dc.identifier.isiut | 000236656600005 | |
Appears in Collections: | Staff Publications |
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