Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2005.12.114
Title: Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
Authors: Liu, H.F. 
Xiang, N. 
Chua, S.J.
Keywords: A1. High-resolution X-ray diffraction
A1. Rapid thermal annealing
A3. Molecular beam expitaxy
B1. Dilute nitrites
Issue Date: 15-Apr-2006
Citation: Liu, H.F., Xiang, N., Chua, S.J. (2006-04-15). Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy. Journal of Crystal Growth 290 (1) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.114
Abstract: We have investigated by high-resolution X-ray diffraction, secondary-ion-mass-spectroscopy (SIMS) and Raman scattering the effects of rapid thermal annealing on the structural properties of GaNxAs 1-x ternary alloys coherently grown on GaAs (0 0 1) substrates by molecular beam epitaxy. X-ray diffraction indicates that the in-plane strain does not relax and the vertical lattice in the GaNAs film tends to shrink, while SIMS reveals the absence of any N concentration change upon annealing. Furthermore, post-growth annealing causes an increase of substitutional N as revealed by the increase of the ratio of Raman scattering intensity between the nitrogen-localized vibration mode and the GaAs-like LO. After performing strain analysis, we conclude with the changes of N configurations in the GaNxAs1-x from the N-N split interstitial to the N-As split interstitial and the NAs substitutional at elevated temperatures, the thermal behaviors of N-N, N-As and NAs are reported over 700-850 °C. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/81974
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2005.12.114
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