Please use this identifier to cite or link to this item:
|Title:||Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors|
|Authors:||Yuan, T. |
|Citation:||Yuan, T., Jin, C.S., Jin, Y. (2003-04). Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors. Microelectronics Journal 34 (4) : 305-312. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(02)00102-7|
|Abstract:||In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.8 1/p1-Ga0.9In0.1As0.09Sb0. 91 and N1-GaSb/n2-Ga0.9In0.1As0.09 Sb0.91/p-Ga0.8In0.2As0.19Sb 0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1-n2-p structure is more sensitive than that with the p1-side surface recombination velocity for the N-p2-p1 structure. In the N-p2-p1 structure with the incident light from the p1-side surface, two-color detection is achieved. © 2003 Elsevier Science Ltd. All rights reserved.|
|Source Title:||Microelectronics Journal|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 18, 2018
WEB OF SCIENCETM
checked on Jul 18, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.