Please use this identifier to cite or link to this item:
|Title:||An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer|
|Authors:||Park, C.S. |
Dual metal gates
|Citation:||Park, C.S., Cho, B.J., Kwong, D.-L. (2003-05). An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer. IEEE Electron Device Letters 24 (5) : 298-300. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812548|
|Abstract:||We propose and demonstrate a novel approach for dual metal gate CMOS process integration through the use of a very thin aluminum nitride (AINx) buffer layer between metal and gate oxide. This buffer layer prevents the gate oxide from being exposed to a metal etching process which potentially causes oxide thinning and damage. Subsequent annealing consumes the very thin AlNx layer and converts it into a new metal alloy film by reacting with gate metals, resulting in no increase in EOT due to this buffer layer. The work function of the original gate metal is also modified as a result of its reaction with AlNx, making this approach extremely attractive for engineering the work function for dual metal gate CMOS applications.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 7, 2018
checked on Nov 2, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.