Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812548
Title: An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer
Authors: Park, C.S. 
Cho, B.J. 
Kwong, D.-L.
Keywords: Aluminum nitride
CMOS
Dual metal gates
Workfunction
Issue Date: May-2003
Citation: Park, C.S., Cho, B.J., Kwong, D.-L. (2003-05). An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer. IEEE Electron Device Letters 24 (5) : 298-300. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812548
Abstract: We propose and demonstrate a novel approach for dual metal gate CMOS process integration through the use of a very thin aluminum nitride (AINx) buffer layer between metal and gate oxide. This buffer layer prevents the gate oxide from being exposed to a metal etching process which potentially causes oxide thinning and damage. Subsequent annealing consumes the very thin AlNx layer and converts it into a new metal alloy film by reacting with gate metals, resulting in no increase in EOT due to this buffer layer. The work function of the original gate metal is also modified as a result of its reaction with AlNx, making this approach extremely attractive for engineering the work function for dual metal gate CMOS applications.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81953
ISSN: 07413106
DOI: 10.1109/LED.2003.812548
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