Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssc.2012.10.023
Title: An improved effective-mass-theory equation for phosphorus doped in silicon
Authors: Hui, H.T. 
Keywords: A. Semiconductor impurity
A. Solid-state physics
C. Effective-mass theory (EMT)
D. Central-cell correction
Issue Date: Jan-2013
Citation: Hui, H.T. (2013-01). An improved effective-mass-theory equation for phosphorus doped in silicon. Solid State Communications 154 (1) : 19-24. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2012.10.023
Abstract: A new multi-valley effective-mass-theory (EMT) equation is derived for the phosphorus doped in silicon. This equation admits solutions which agree with the measured ground state energy and the square modulus of the ground-state wavefunction ΨA1(0)2 at the donor site accurately. This avoids the use of the so-called central-cell correction approximation method to calculate the hyperfine constant at the donor site. Furthermore, the energy levels for the upper lying states of T2 and E can also be predicted relatively accurately. The newly derived EMT equation has applications in the characterization of semiconductor or spintronics devices. © 2012 Elsevier Ltd.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/81950
ISSN: 00381098
DOI: 10.1016/j.ssc.2012.10.023
Appears in Collections:Staff Publications

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