Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030834
Title: Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices
Authors: Pu, J. 
Chan, D.S.H. 
Kim, S.-J.
Cho, B.J.
Keywords: Flash memory
GdAlOx blocking layer
Polysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS)
Retension
Issue Date: 2009
Citation: Pu, J., Chan, D.S.H., Kim, S.-J., Cho, B.J. (2009). Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devices. IEEE Transactions on Electron Devices 56 (11) : 2739-2745. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030834
Abstract: Aluminum-doped gadolinium oxides GdAlOx are proposed as a blocking oxide layer in charge-trap-type Flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al2O3 blocking layer. The optimization of Al percentage in GdAlOx, as well as charge loss mechanism in the memory cell device, has also been systematically studied. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/81946
ISSN: 00189383
DOI: 10.1109/TED.2009.2030834
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