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https://doi.org/10.1063/1.1812835
DC Field | Value | |
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dc.title | Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric | |
dc.contributor.author | Wu, N. | |
dc.contributor.author | Zhang, Q. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Chan, D.S.H. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:23:32Z | |
dc.date.available | 2014-10-07T04:23:32Z | |
dc.date.issued | 2004-11-01 | |
dc.identifier.citation | Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Li, M.F., Balasubramanian, N., Chin, A., Kwong, D.-L. (2004-11-01). Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric. Applied Physics Letters 85 (18) : 4127-4129. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1812835 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81945 | |
dc.description.abstract | An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH 4 annealing was implemented prior to HfO 2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH 4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO 2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Å and a leakage current of 1.16 × 10 -5 A/cm 2 at 1 V gate bias was achieved for TaN/HfO 2/Ge MOS capacitors with the SiH 4 surface treatment. © 2004 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1812835 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1812835 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 85 | |
dc.description.issue | 18 | |
dc.description.page | 4127-4129 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000224894900057 | |
Appears in Collections: | Staff Publications |
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