Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1812835
Title: Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
Authors: Wu, N.
Zhang, Q.
Zhu, C. 
Chan, D.S.H. 
Li, M.F. 
Balasubramanian, N.
Chin, A.
Kwong, D.-L.
Issue Date: 1-Nov-2004
Citation: Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Li, M.F., Balasubramanian, N., Chin, A., Kwong, D.-L. (2004-11-01). Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric. Applied Physics Letters 85 (18) : 4127-4129. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1812835
Abstract: An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH 4 annealing was implemented prior to HfO 2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH 4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO 2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Å and a leakage current of 1.16 × 10 -5 A/cm 2 at 1 V gate bias was achieved for TaN/HfO 2/Ge MOS capacitors with the SiH 4 surface treatment. © 2004 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81945
ISSN: 00036951
DOI: 10.1063/1.1812835
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