Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application

Abstract

A novel HfTaON/SiO2 gate stack has been investigated for low-standby-power (LSTP) CMOS application. This gate stack exhibited good physical and electrical characteristics, including good thermal stability up to 1000 °C low gate-leakage current, excellent interface properties, and superior electron and hole mobility (100% and 96% of universal curves at 0.8 MV/cm). The excellent characteristics observed in HfTaON/SiO2 suggest that it may be a very promising gate stack for advanced LSTP CMOS application. © 2006 IEEE.