Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.875722
Title: Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
Authors: Yu, X.
Yu, M.
Zhu, C. 
Keywords: High-κ gate dielectric
Interface-state density (Dit)
Metal gate
Mobility
MOSFETs
Tthermal stability
Issue Date: Jun-2006
Citation: Yu, X., Yu, M., Zhu, C. (2006-06). Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application. IEEE Electron Device Letters 27 (6) : 498-501. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.875722
Abstract: A novel HfTaON/SiO2 gate stack has been investigated for low-standby-power (LSTP) CMOS application. This gate stack exhibited good physical and electrical characteristics, including good thermal stability up to 1000 °C low gate-leakage current, excellent interface properties, and superior electron and hole mobility (100% and 96% of universal curves at 0.8 MV/cm). The excellent characteristics observed in HfTaON/SiO2 suggest that it may be a very promising gate stack for advanced LSTP CMOS application. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81940
ISSN: 07413106
DOI: 10.1109/LED.2006.875722
Appears in Collections:Staff Publications

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