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|Title:||Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths|
|Authors:||Lee, R.T.-P. |
|Citation:||Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2008-04). Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths. IEEE Electron Device Letters 29 (4) : 382-385. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.917813|
|Abstract:||In this letter, we report the impact of incorporating aluminum (Al) in nickel aluminide disilcide (NiSi2-χAlx) on the Schottky-barrier for electrons (φn B) in NiSi2-χAlx/Si contacts for parasitic series resistance reduction. A wide range of Al concentration was investigated, and an optimum value was obtained. Based on the optimum Al concentration, arsenicsegregated NiSi2-χAlχ (As-segregated NiSi2-χAlχ) contacts were shown to achieve conduction band-edge Schottky-barrier heights with φn B = 0.133 eV. This novel As-segregated NiSi2-χAlx contact was integrated in FinFETs with a gate length of 80 nm and a fin width (WFin) of 11 nm, demonstrating improvement in current drivability of 30% over FinFETs with As-segregated NiSi contacts. We show that these ultranarrow fins (WFin = 11 nm) can be fully silicided reliably with NiSi2-χAlx, demonstrating scalability and the smallest fully silicided Si fins reported to date. For these ultra-narrow Si fins, we have successfully alleviated the concerns of parasitic series resistance without the use of selective epitaxial raised source and drain technology. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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