Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2431464
Title: A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
Authors: Huang, J.
Fu, J.
Zhu, C. 
Tay, A.A.O. 
Cheng, Z.-Y.
Leitz, C.W.
Lochtefeld, A.
Issue Date: 2007
Citation: Huang, J., Fu, J., Zhu, C., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A. (2007). A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric. Applied Physics Letters 90 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2431464
Abstract: The interfacial and electrical properties of metal organic chemical vapor deposited HfAlO on compressively strained Si0.5 Ge0.5 (ε- Si0.5 Ge0.5) substrate without or with surface nitridation treatment were investigated. X-ray photoelectron spectroscopic analysis suggests that an interfacial layer containing Ge Ox, Hf silicate, and Al silicate exists on substrates with direct deposition of HfAlO, whereas an interfacial layer containing Si Nx Oy exists on substrates with surface nitridation prior to HfAlO deposition. The TaNHfAlOε- Si0.5 Ge0.5 capacitor with surface nitridation shows a larger permittivity of the entire gate dielectric with a thinner interfacial layer (in terms of equivalent oxide thickness), a smaller interface trap charge density, and less severe flatband shift as well as two orders of magnitude lower gate leakage in comparison with those capacitors without nitridation. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81917
ISSN: 00036951
DOI: 10.1063/1.2431464
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