Please use this identifier to cite or link to this item: https://doi.org/10.1109/TPEL.2010.2049586
Title: A smart-power synchronous rectifier by CMOS process
Authors: Lim, C.Y.
Liang, Y.C. 
Samudra, G.S. 
Balasubramanian, N.
Keywords: dc-dc converter
power integrated circuits
power MOSFET
synchronous rectifier
Issue Date: 2010
Source: Lim, C.Y., Liang, Y.C., Samudra, G.S., Balasubramanian, N. (2010). A smart-power synchronous rectifier by CMOS process. IEEE Transactions on Power Electronics 25 (9) : 2469-2477. ScholarBank@NUS Repository. https://doi.org/10.1109/TPEL.2010.2049586
Abstract: The usage of power MOSFET functioning as a synchronous rectifier is a much preferred choice in switched-mode converters, especially for those of high-frequency and high-power density with low output voltage, for minimization of power loss and efficient energy management. However, its scope of application and integration as a replacement of diode rectifier is handicapped by the compulsory requirement of external sensing and gating circuits needed for precise ON/OFF timing control and the tedious incorporation to be a dependent part of the overall converter circuit. We report a unique smart-power synchronous rectifier (SPSR) that is a two-terminal diode-alike power-integrated circuit building block that provides ultralow on-state voltage rectification without the need of adding any external sensing and gating control. Therefore, a direct replacement of diode rectifier by the SPSR in any converter circuit is made possible. In this paper, the design and fabrication of a fully CMOS-process compatible SPSR device is presented. The fabricated device achieved a low forward voltage of 0.14 V in comparison with 0.75 V of the body diode at the same rated-current density. It has a low specific input capacitance of 11.8 nF/cm2, which makes it suitable for megahertz switching operations. This reported SPSR is CMOS-fabrication-process compatible and can be directly integrated with any power converter circuits on the silicon substrate. © 2010 IEEE.
Source Title: IEEE Transactions on Power Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/81914
ISSN: 08858993
DOI: 10.1109/TPEL.2010.2049586
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