Please use this identifier to cite or link to this item:
|Title:||A MONOS-type flash memory using a high-k HfAlO charge trapping layer|
|Citation:||Tan, Y.N., Chim, W.K., Cho, B.J., Choi, W.K. (2004). A MONOS-type flash memory using a high-k HfAlO charge trapping layer. Electrochemical and Solid-State Letters 7 (9) : G198-G200. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1784054|
|Abstract:||Metal-oxide-nitride-oxide-silicon (MONOS) type memory devices with TaN/HfN gate and a high dielectric constant (high-k) charge trapping layer were experimentally realized by employing a SiO 2/high-k/SiO 2 structure that used Al 2O 3, HfO 2, or HfAlO films, instead of Si 3N 4 film. The charge storage and retention characteristics of capacitors with Al 2O 3, HfO 2, or HfAlO as the charge storage layer are compared to conventional MONOS (Si 3N 4 film) capacitors. Mixing 10 atom % of Al 2O 3 with 90 atom % of HfO 2 to form HfAlO improves the charge retention capability of HfO 2 without severely degrading its programming speed. Unlike conventional MONOS memory devices, HfAlO devices also exhibit better resistance to over-erase. The differences in the program/erase characteristics and the charge storage capability between the different structures are discussed. © 2004 The Electrochemical Society. All rights reserved.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 15, 2019
WEB OF SCIENCETM
checked on Jan 7, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.