Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81858
Title: A D-band power amplifier with 30-ghz bandwidth and 4.5-dBm Psat for high-speed communication system
Authors: Zhang, B.
Xiong, Y.-Z.
Wang, L.
Hu, S.
Lim, T.-G.
Zhuang, Y.-Q.
Li, L.-W. 
Issue Date: 2010
Source: Zhang, B.,Xiong, Y.-Z.,Wang, L.,Hu, S.,Lim, T.-G.,Zhuang, Y.-Q.,Li, L.-W. (2010). A D-band power amplifier with 30-ghz bandwidth and 4.5-dBm Psat for high-speed communication system. Progress in Electromagnetics Research 107 : 161-178. ScholarBank@NUS Repository.
Abstract: This paper presents a D-band power amplifier for high- speed communication system. The capacitive effect of interconnection via on transistor performance at high frequency is analyzed and a new via structure is employed to reduce the capacitive effect. The on-chip matching technique for high frequency amplifier is analyzed and the thin-film microstrip line matching network is used, which is combined with biasing network to reduce RF signal loss and silicon cost. The amplifier is fabricated in 0.13-μm SiGe BiCMOS process. The experimental results show a 7dB gain at 130GHz with 3-dB bandwidth of 30-GHz. The input return loss is better than 10dB over 23GHz. In addition, this amplifier achieves saturated output power (Psat) of 4.5dBm and input 1-dB gain compression point (P1 dB) of -4.5dBm. The chip size of implemented power amplifier is only 0.22mm2.
Source Title: Progress in Electromagnetics Research
URI: http://scholarbank.nus.edu.sg/handle/10635/81858
ISSN: 10704698
Appears in Collections:Staff Publications

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