Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2006.888669
Title: A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
Authors: Yu, X.
Yu, M.
Zhu, C. 
Keywords: Charge trapping
Gate leakage current
High-Κ gate dielectric
Interface-state density Dit
Metal gate
Mobility
MOSFETs
Thermal stability
Vth instability
Issue Date: Feb-2007
Citation: Yu, X., Yu, M., Zhu, C. (2007-02). A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications. IEEE Transactions on Electron Devices 54 (2) : 284-290. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.888669
Abstract: The electrical characteristics of a novel HfTaON/SiO2 gate stack, which consists of a HfTaON film with a dielectric constant of 23 and a 10-Å SiO2 interfacial layer, have been investigated for advanced CMOS applications. The HfTaON/SiO2 gate stack provided much lower gate leakage current against SiO2, good interface properties, excellent transistor characteristics, and superior carrier mobility. Compared to HfON/SiO2, improved thermal stability was also observed in the HfTaON/SiO2 gate stack. Moreover, charge-trapping-induced threshold voltage Vth instability was examined for the HfTaON/ SiO2 and HfON/SiO2 gate stacks. The HfTaON/SiO2 gate stack exhibited significant suppression of the Vth instability compared to the HfON/SiO2, in particular, for nMOSFETs. The excellent performances observed in the HfTaON/SiO2 gate stack indicate that it has the potential to replace conventional SiO2 or SiON as gate dielectric for advanced CMOS applications.© 2007 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/81846
ISSN: 00189383
DOI: 10.1109/TED.2006.888669
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