Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81819
Title: Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysis
Authors: Antoszewski, J.
Dell, J.M.
Faraone, L.
Tan, L.S. 
Raman, A. 
Chua, S.J. 
Holmes, D.S.
Lindemuth, J.R.
Meyer, J.R.
Keywords: Mobility spectrum
Multi-carrier fit
Two dimensional electron gas
Issue Date: Feb-1997
Source: Antoszewski, J.,Dell, J.M.,Faraone, L.,Tan, L.S.,Raman, A.,Chua, S.J.,Holmes, D.S.,Lindemuth, J.R.,Meyer, J.R. (1997-02). Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysis. Materials Science and Engineering B 44 (1-3) : 65-69. ScholarBank@NUS Repository.
Abstract: In this paper we illustrate the power and utility of quantitative mobility spectrum analysis (QMSA) of magnetic field dependent Hall data in order to evaluate the transport parameters of multilayer III-V materials and device structures such as high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). As a first example, we present the QMSA of a n + GaAs/GaAs/n + AlGaAs/p + GaAs/n GaAs/n + GaAs HBT structure, in which QMSA resolves two carrier species: holes with mobility of 700 cm2 V-1 s-1 and density 1.6 × 1018 cm-3, and electrons with mobility of 1530 cm2 V-1 s-1 and density 3.0 × 1018 cm-3. A direct comparison with the results of C-V electrochemical profiling indicates that all n+-type layers (sub-collector, emitter and cap) are characterised by an electron mobility which appears in the mobility spectrum as a single peak with an average density corresponding to the sum of all three n+ layers. The peak in the hole spectrum may be clearly identified with the single p-type base layer. The second example is an n+ GaAs/n + AlGaAs/AlGaAs/GaAs HEMT structure in which the 2D electron gas population with a mobility of 7750 cm2 V-1 s-1 and sheet density of 2.6 × 1011 cm-2 is readily identified and separated from the mobility spectrum peak corresponding to the two highly-doped n-type capping layers. Due to the similar carrier mobility in both capping layers, their contribution to the spectrum appears as a single electron peak at 1100 cm2 V-1 s-1 with a density of 2.1 × 1016 cm-3. © 1997 Elsevier Science S.A.
Source Title: Materials Science and Engineering B
URI: http://scholarbank.nus.edu.sg/handle/10635/81819
ISSN: 09215107
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

42
checked on Feb 16, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.