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|Title:||Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysis|
Two dimensional electron gas
|Citation:||Antoszewski, J.,Dell, J.M.,Faraone, L.,Tan, L.S.,Raman, A.,Chua, S.J.,Holmes, D.S.,Lindemuth, J.R.,Meyer, J.R. (1997-02). Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysis. Materials Science and Engineering B 44 (1-3) : 65-69. ScholarBank@NUS Repository.|
|Abstract:||In this paper we illustrate the power and utility of quantitative mobility spectrum analysis (QMSA) of magnetic field dependent Hall data in order to evaluate the transport parameters of multilayer III-V materials and device structures such as high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). As a first example, we present the QMSA of a n + GaAs/GaAs/n + AlGaAs/p + GaAs/n GaAs/n + GaAs HBT structure, in which QMSA resolves two carrier species: holes with mobility of 700 cm2 V-1 s-1 and density 1.6 × 1018 cm-3, and electrons with mobility of 1530 cm2 V-1 s-1 and density 3.0 × 1018 cm-3. A direct comparison with the results of C-V electrochemical profiling indicates that all n+-type layers (sub-collector, emitter and cap) are characterised by an electron mobility which appears in the mobility spectrum as a single peak with an average density corresponding to the sum of all three n+ layers. The peak in the hole spectrum may be clearly identified with the single p-type base layer. The second example is an n+ GaAs/n + AlGaAs/AlGaAs/GaAs HEMT structure in which the 2D electron gas population with a mobility of 7750 cm2 V-1 s-1 and sheet density of 2.6 × 1011 cm-2 is readily identified and separated from the mobility spectrum peak corresponding to the two highly-doped n-type capping layers. Due to the similar carrier mobility in both capping layers, their contribution to the spectrum appears as a single electron peak at 1100 cm2 V-1 s-1 with a density of 2.1 × 1016 cm-3. © 1997 Elsevier Science S.A.|
|Source Title:||Materials Science and Engineering B|
|Appears in Collections:||Staff Publications|
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