Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122803
Title: Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence
Authors: Liu, X.
Chan, D.S.H. 
Chim, W.K. 
Phang, J.C.H. 
Issue Date: 1998
Citation: Liu, X., Chan, D.S.H., Chim, W.K., Phang, J.C.H. (1998). Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence. Applied Physics Letters 73 (24) : 3548-3549. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122803
Abstract: In this letter, we describe the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV cathodoluminescence peak buildup in SiO2-Si structures. The results suggest that electrical stress may relax the interface strain and modulate the radiation sensitivity. This phenomenon may be extended to provide a nonelectrical and physical evaluation of the electrical stress degradation of SiO2-Si structures. Possible mechanisms are proposed to explain the observations. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81818
ISSN: 00036951
DOI: 10.1063/1.122803
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