Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence

Abstract

In this letter, we describe the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV cathodoluminescence peak buildup in SiO2-Si structures. The results suggest that electrical stress may relax the interface strain and modulate the radiation sensitivity. This phenomenon may be extended to provide a nonelectrical and physical evaluation of the electrical stress degradation of SiO2-Si structures. Possible mechanisms are proposed to explain the observations. © 1998 American Institute of Physics.