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|Title:||Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence|
|Citation:||Liu, X., Chan, D.S.H., Chim, W.K., Phang, J.C.H. (1998). Evaluation of electrical stress effects on SiO2-Si structures using scanning electron microscope cathodoluminescence. Applied Physics Letters 73 (24) : 3548-3549. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122803|
|Abstract:||In this letter, we describe the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV cathodoluminescence peak buildup in SiO2-Si structures. The results suggest that electrical stress may relax the interface strain and modulate the radiation sensitivity. This phenomenon may be extended to provide a nonelectrical and physical evaluation of the electrical stress degradation of SiO2-Si structures. Possible mechanisms are proposed to explain the observations. © 1998 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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