Please use this identifier to cite or link to this item:
Title: Valence band parameters for wurtzite GaN and InN
Authors: Yeo, Y.C. 
Chong, T.C. 
Li, M.F. 
Issue Date: 1997
Citation: Yeo, Y.C.,Chong, T.C.,Li, M.F. (1997). Valence band parameters for wurtzite GaN and InN. Materials Research Society Symposium - Proceedings 482 : 923-928. ScholarBank@NUS Repository.
Abstract: Theoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the kz and the in-plane kx-ky plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Oct 12, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.