Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81802
Title: Valence band parameters for wurtzite GaN and InN
Authors: Yeo, Y.C. 
Chong, T.C. 
Li, M.F. 
Issue Date: 1997
Source: Yeo, Y.C.,Chong, T.C.,Li, M.F. (1997). Valence band parameters for wurtzite GaN and InN. Materials Research Society Symposium - Proceedings 482 : 923-928. ScholarBank@NUS Repository.
Abstract: Theoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the kz and the in-plane kx-ky plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/81802
ISSN: 02729172
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