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|Title:||Valence band parameters for wurtzite GaN and InN|
|Authors:||Yeo, Y.C. |
|Citation:||Yeo, Y.C.,Chong, T.C.,Li, M.F. (1997). Valence band parameters for wurtzite GaN and InN. Materials Research Society Symposium - Proceedings 482 : 923-928. ScholarBank@NUS Repository.|
|Abstract:||Theoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the kz and the in-plane kx-ky plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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