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|Title:||The formation of In-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy|
|Citation:||Li, P.,Chua, S.J.,Hao, M.,Wang, W.,Zhang, X.,Sugahara, T.,Sakai, S. (2000). The formation of In-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research 5 (SUPPL. 1) : -. ScholarBank@NUS Repository.|
|Abstract:||InGaN thin films were grown by low-pressure metalorganic-vapor-phase- epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In-rich regions formed at the periphery of the hexagonal pits.|
|Source Title:||MRS Internet Journal of Nitride Semiconductor Research|
|Appears in Collections:||Staff Publications|
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