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|Title:||Synthesizing germanium nanocrystals in amorphous silicon oxide by rapid thermal annealing|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K.,Thio, H.H.,Ng, S.P.,Ng, V.,Cheong, B.A. (2000-04). Synthesizing germanium nanocrystals in amorphous silicon oxide by rapid thermal annealing. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties 80 (4) : 729-739. ScholarBank@NUS Repository. https://doi.org/10.1080/014186300255366|
|Abstract:||The Raman and photoluminescence (PL) characteristics of Ge nanocrystals embedded in amorphous SiO2 films synthesized by rapid thermal annealing were presented. The nanocrystal size δ was estimated on the basis of the phonon confinement model. The Raman results showed that, for samples annealed at different annealing temperatures, a transition from amorphous to nanocrystalline Ge occurred at annealing temperature higher than 700°C. δ was estimated to lie between 18 and 53 Å. Two PL peaks at 1.8 and 2.2 eV were observed for Ge nanocrystals with δ = 18-53 Å. The PL results of the 2.2 eV peak agreed with that published in the literature. The origin of this peak is still under investigation. A comparison of the PL peak with δ and the results of the forming-gas annealing experiments suggest that the 1.8 eV peak is possibly related to both the Ge nanocrystals and Ge related defects in the SiO2 network.|
|Source Title:||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|Appears in Collections:||Staff Publications|
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