Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405388
Title: Study of implanted boron distribution in p+n structures using scanning capacitance microscopy
Authors: Teo, Y.L.
Pey, K.L. 
Chim, W.K. 
Chong, Y.F.
Keywords: Dopant profiling
Pn junction
Scanning capacitance microscopy
Scanning probe microscopy
Issue Date: 2000
Citation: Teo, Y.L., Pey, K.L., Chim, W.K., Chong, Y.F. (2000). Study of implanted boron distribution in p+n structures using scanning capacitance microscopy. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 175-183. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405388
Abstract: The scanning capacitance microscopy (SCM) technique was used to measure the two-dimensional (2D) boron dopant profile from cross sections of a high-energy boron-implanted pn junction and a laser annealed ultra-shallow p+n junction. Samples from the same samples were also sent for secondary ion mass spectroscopy (SIMS) profiling. It was found that the electrical junction measured by SCM is not the same as the metallurgical junction from SIMS and in addition it shifts with dc bias. Laser-annealed boron samples with ultra-shallow profiles were also investigated. The measured SCM results do not agree well with the calculations using SIMS data.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/81769
ISSN: 0277786X
DOI: 10.1117/12.405388
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