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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81682
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dc.titlePredicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
dc.contributor.authorGuan, Hao
dc.contributor.authorLi, M.F.
dc.contributor.authorZhang, Yaohui
dc.contributor.authorCho, B.J.
dc.contributor.authorJie, B.B.
dc.contributor.authorXie, Joseph
dc.contributor.authorWang, J.L.F.
dc.contributor.authorYen, Andrew C.
dc.contributor.authorSheng, George T.T.
dc.contributor.authorDong, Zhong
dc.contributor.authorLi, Weidan
dc.date.accessioned2014-10-07T03:10:53Z
dc.date.available2014-10-07T03:10:53Z
dc.date.issued1999
dc.identifier.citationGuan, Hao,Li, M.F.,Zhang, Yaohui,Cho, B.J.,Jie, B.B.,Xie, Joseph,Wang, J.L.F.,Yen, Andrew C.,Sheng, George T.T.,Dong, Zhong,Li, Weidan (1999). Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique. International Integrated Reliability Workshop Final Report : 20-23. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81682
dc.description.abstractThe direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 angstroms and 37 angstroms oxide and with various metal antenna structures clearly indicate plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found at serious plasma damage region.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleInternational Integrated Reliability Workshop Final Report
dc.description.page20-23
dc.description.coden85RQA
dc.identifier.isiutNOT_IN_WOS
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