Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.280576
Title: Numerical prediction of etched profile in pyrolytic laser etching
Authors: Wee, T.S. 
Lu, Y.F. 
Chim, W.K. 
Keywords: Carbon tetrachloride
Diffused reflection
Finite element method
Heat conduction analysis
Laser etched profile
Laser induced temperature profile
Numerical laser etching model
Pyrolytic laser etching
Silicon
Issue Date: 1997
Source: Wee, T.S., Lu, Y.F., Chim, W.K. (1997). Numerical prediction of etched profile in pyrolytic laser etching. Proceedings of SPIE - The International Society for Optical Engineering 3184 : 211-220. ScholarBank@NUS Repository. https://doi.org/10.1117/12.280576
Abstract: A quasi-static two-dimensional heat conduction analysis is used to deduce the geometrical profile of a cavity pyrolytically etched on an isotropic silicon substrate by a stationary CW Ar+ laser with a Gaussian intensity profile. Starting with a substrate having a flat surface, the analysis progressively removes regions of the substrate to model the actual etching action. The finite element method is used to solve the non-linear problem iteratively. Multiple reflections of the laser beam in the etched cavity are also modeled assuming that the substrate surface is perfectly diffused. Laser etching experiments performed on a silicon substrate in a CCl4 gas ambient are used to verify the numerical routine. Comparison with the numerical results indicates that the desorption of SiCl2 radicals is probably responsible for the final etched profile obtained. Deposition of the residue from the chemical etching was also observed in the etched cavity. The re-deposition was found to proceed in different manners for stationary and scanning beams. These differing actions of re-deposition are explained in the context of the different temperature distributions induced in the two cases.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/81621
ISSN: 0277786X
DOI: 10.1117/12.280576
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